? semiconductor components industries, llc, 2010 october, 2010 -- rev. 5 1 publication order number: mmbd330t1/d mmbd330t1g, MMBD770T1G schottky barrier diodes schottky barrier diodes are designed primarily for high--efficiency uhf and vhf detector applications. readily available to many other fast switching rf and digital applications. they are housed in the sot--323/sc--70 package which is designed for low--power surface mount applications. features ? extremely low minority carrier lifetime ? very low capacitance ? low reverse leakage ? available in 8 mm tape and reel ? these devices are pb--free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit reverse voltage mmbd330t1 mmbd770t1 v r 30 70 vdc forward continuous current (dc) i f 200 ma nonrepetitive peak forward current (note 1) i fsm 1.0 a forward power dissipation t a =25 ? c p f 120 mw junction temperature t j -- 55 to +125 ? c storage temperature range t stg -- 55 to +150 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. 60 hz halfsine. http://onsemi.com device package shipping ? ordering information marking diagrams 1 2 3 sc--70/sot--323 case 419 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. MMBD770T1G sc--70 (pb--free) 3000/tape & reel 13 mmbd330t1g sc--70 (pb--free) 3000/tape & reel xx m g g xx = specific device code 4t = mmbd330t1 5h = mmbd770t1 m = date code g = pb--free package (note: microdot may be in either location) *date code orientation may vary depending upon the manufacturing location. 1
mmbd330t1g, MMBD770T1G http://onsemi.com 2 electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit reverse breakdown voltage (i r =10 m a) mmbd330t1 mmbd770t1 v (br)r 30 70 -- -- -- -- volts diode capacitance (v r = 15 volts, f = 1.0 mhz) mmbd330t1 (v r = 20 volts, f = 1.0 mhz) mmbd770t1 c t -- -- 0.9 0.5 1.5 1.0 pf reverse leakage (v r = 25 v) mmbd330t1 (v r = 35 v) mmbd770t1 i r -- -- 13 9.0 200 200 nadc forward voltage (i f = 1.0 madc) mmbd330t1 (i f =10ma) (i f = 1.0 madc) mmbd770t1 (i f =10ma) v f -- -- -- -- 0.38 0.52 0.42 0.70 0.45 0.60 0.50 1.0 vdc typical characteristics mmbd330t1 v r , reverse voltage (volts) figure 1. total capacitance i f , forward current (ma) figure 2. minority carrier lifetime v r , reverse voltage (volts) figure 3. reverse leakage v f , forward voltage (volts) figure 4. forward voltage krakauer method f=1.0mhz , forward current (ma) i f , reverse leakage ( a) i r m 0.2 0.4 0.6 0.8 1.0 1.2 0 6.0 12 18 24 10 1.0 0.1 0.01 0.001 0204060 500 0 80 100 0 3.0 6.0 9.0 12 15 21 2.8 30 24 27 18 2.4 2.0 1.6 1.2 0.8 0 100 10 1.0 0.1 30 10 30 50 70 90 400 300 200 100 0.4 , minority carrier lifetime (ps) , total capacitance (pf) c t t a =--40 ? c t a =85 ? c t a =25 ? c t a = 100 ? c t a =75 ? c t a =25 ? c mmbd330t1 mmbd330t1 mmbd330t1 mmbd330t1
mmbd330t1g, MMBD770T1G http://onsemi.com 3 typical characteristics mmbd770t1 figure 5. total capacitance figure 6. minority carrier lifetime figure 7. reverse leakage figure 8. forward voltage v r , reverse voltage (volts) i f , forward current (ma) v r , reverse voltage (volts) v f , forward voltage (volts) krakauer method f=1.0mhz , forward current (ma) i f , reverse leakage ( a) i r m 0.2 0.4 0.8 1.2 1.6 2.0 0 102030 40 10 1.0 0.1 0.01 0.001 0204060 500 0 80 100 0 5.0 10 15 20 25 35 50 40 45 30 2.0 1.6 1.2 0.8 0 100 10 1.0 0.1 50 10 30 50 70 90 400 300 200 100 0.4 , minority carrier lifetime (ps) , total capacitance (pf) c t t a =--40 ? c t a =85 ? c t a =25 ? c t a = 100 ? c t a =75 ? c t a =25 ? c mmbd770t1 mmbd770t1 mmbd770t1 mmbd770t1
mmbd330t1g, MMBD770T1G http://onsemi.com 4 package dimensions sc--70 (sot--323) case 419--04 issue n a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 ? mm inches ? scale 10:1 *for additional information on our pb--free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further noti ce to any products herein. scillc makes no warranty, representation or guarantee regarding the suitab ility of its pr oducts for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liab ility, including without limitation special, cons equential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situat ion where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc an d its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the desi gn or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any m anner. publication ordering information n. american technical support : 800--282--9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81--3--5773--3850 mmbd330t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303--675--2175 or 800--344--3860 toll free usa/canada fax : 303--675--2176 or 800--344--3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc a sales representative
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